Realizing high thermoelectric performance in non-nanostructured n-type PbTe
Realizing high thermoelectric performance in non-nanostructured n-type PbTe
复制标题
在非纳米结构n型PbTe中实现高热电性能
DOI：
10.1039/d1ee03883d
复制
发表时间：
2022-03-14
影响因子：
32.5
通讯作者：
He, Jiaqing
中科院分区：
文献类型：
--
作者：
Jia, Baohai;Huang, Yi;He, Jiaqing
纳米结构工程提高了热电材料的性能，但材料在高温下稳定性的恶化缩短了热电模块的使用寿命。在不引入任何纳米沉淀物的情况下，我们实现了s掺杂n型PbTe在750 K时高达1.7的zT值。这与最先进的纳米复合材料相当。小s掺杂可以通过提高阴离子和阳离子原子之间的键能来提高Pb空位的形成能，从而消除Pb空位，提高载流子迁移率。基于优化后的PbTe制备的单热电模块和分段热电模块的转换效率分别为9.3%和12.2%。分段模块的输出特性在10小时的测量周期内保持不变。这强调了材料的良好稳定性。这项工作证明了在热电材料中操纵空位的重要性，并说明了高效稳定的PbTe热电模块的实用价值。
Nanostructure engineering has improved the performance of thermoelectric materials, but the deteriorated stability of the materials at high temperatures shortens the service life of thermoelectric modules. Here, we realized a high zT value of 1.7 at 750 K in S-doped n-type PbTe without introducing any nanoprecipitates. This is comparable to the state-of-the-art nanocomposites. Small S-doping can increase the formation energy of Pb vacancies by increasing the bonding energy between anionic and cationic atoms, thus resulting in the elimination of Pb vacancies and improvement in carrier mobility. Fabricated single and segmented thermoelectric modules based on optimized PbTe in this work show high conversion efficiencies of 9.3% and 12.2%, respectively. The output properties of the segmented module remain unchanged over a 10 h measurement period. This emphasizes the good stability of the materials. This work demonstrates the importance of manipulating vacancies in thermoelectric materials and illustrates the practical value of efficient and stable PbTe thermoelectric modules.