Low temperature nitrogen incorporation method for enhanced electrical properties in hafnia based gate dielectrics
Low temperature nitrogen incorporation method for enhanced electrical properties in hafnia based gate dielectrics
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DOI：
10.1063/1.2404604
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发表时间：
2006-12
影响因子：
4
通讯作者：
K. Ramani;C. Essary;S. Son;V. Craciun;R. Singh
中科院分区：
文献类型：
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作者：
K. Ramani;C. Essary;S. Son;V. Craciun;R. Singh
为满足未来栅电介质应用的需要，开发了一种低温方法(∼400°C)在Hafnia基电介质中掺入氮气。在氨气气氛中在硅衬底上沉积了Hf金属薄膜，然后在紫外光照射下进行了氧化。利用这种方法，在Hafnia-Si界面形成了包含Hf-Si-O-N键的界面层，这使得薄膜的整体介电性能有了很大的提高。该方法在栅偏压为−1V时获得了相当于11.5A的氧化层厚度和小于10−4A/cm~2的漏电流密度。
A low temperature method (∼400°C) for nitrogen incorporation in hafnia based dielectrics has been developed for future gate dielectric applications. Hf metal films were deposited on Si substrates in ammonia ambient and were subsequently oxidized under ultraviolet illumination. Using this method, an interfacial layer comprising Hf–Si–O–N bonding was formed at the hafnia-Si interface, which led to a substantial enhancement in the overall dielectric properties of the film. An equivalent oxide thickness of 11.5A and leakage current densities lower than 10−4A∕cm2 at a gate bias of −1V were achieved by this approach.