Decomposition and nanocrystallization in reactively sputtered amorphous Ta--Si--N thin films
Decomposition and nanocrystallization in reactively sputtered amorphous Ta--Si--N thin films
复制标题
反应溅射非晶 Ta--Si--N 薄膜的分解与纳米晶化
DOI：
10.1063/1.1388173
复制
发表时间：
2001
影响因子：
3.2
通讯作者：
G. Goerigk
中科院分区：
文献类型：
--
作者：
C. Pinnow;M. Bicker;U. Geyer;S. Schneider;G. Goerigk
用反常小角X射线散射（ASAXS）和X射线衍射（XRD）研究了反应溅射非晶Ta-Si-N薄膜的纳米化过程。观察了Ta_（40）Si_（14）N_（46）薄膜在800 ~ 1000 °C范围内不同温度真空退火后的微观结构变化、非晶基体密度变化、纳米晶的分解、形成和生长，并对不同工艺的结果进行了比较。从傅立叶分析的ASAXS强度的纳米结构的调查三元系的推导出使用硬球模型根据Guinier和Fournet。ASAXS研究表明，非晶样品可以描述由单相拟合和双峰相拟合的结晶样品，后者的结果是一致的，与XRD确定TaN和Ta 5Si 3相。详细的分析表明，大约2纳米尺寸的TaN纳米颗粒的分解过程后发展。更大的颗粒...
The nanocrystallization process of reactively sputtered thin amorphous Ta–Si–N films is investigated by anomalous small angle x-ray scattering (ASAXS) and x-ray diffraction (XRD). Changes in the microstructure in Ta40Si14N46 films, density variations in the amorphous matrix, decomposition, formation, and growth of nanocrystals after vacuum anneals at different temperatures in the range between 800 and 1000 °C are observed and the results of the different techniques are compared. From a Fourier analysis of ASAXS intensities the nanostructure of the investigated ternary system is derived using a model of hard spheres according to Guinier and Fournet. ASAXS investigations indicate that the noncrystalline samples can be described by a monophase fit and the crystallized samples by a bimodal-phase fit, the latter results being consistent with XRD which identifies TaN and Ta5Si3 phases. Detailed analysis shows that TaN nanograins of approximately 2 nm size develop after a decomposition process. Larger grains of ...