Inverse Spin-Hall Effect Induced by Spin Pumping in Different Thickness Pt Films

Inverse Spin-Hall Effect Induced by Spin Pumping in Different Thickness Pt Films
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DOI:
10.1109/tmag.2010.2042150
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发表时间:
2010-05
影响因子:
2.1
通讯作者:
H. Nakayama;K. Ando;K. Harii;Y. Kajiwara;T. Yoshino;K. Uchida;E. Saitoh
H. Nakayama;K. Ando;K. Harii;Y. Kajiwara;T. Yoshino;K. Uchida;E. Saitoh
中科院分区:
工程技术4区
文献类型:
--
作者:
H. Nakayama;K. Ando;K. Harii;Y. Kajiwara;T. Yoshino;K. Uchida;E. Saitoh

文献摘要

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研究了Pt薄膜中自旋电流与电动势之间的逆自旋霍尔效应。在室温下测量了不同Pt膜厚(dN =10、30、50和75 nm)的Ni_(81)Fe_(19)/Pt双层膜体系中自旋抽运引起的逆自旋霍尔效应产生的电压。实验结果表明,由逆自旋霍尔效应引起的信号VISHE与Pt的厚度dN成反比,这一结果可以用一个简单的等效电路模型很好地再现。
The inverse spin-Hall effect, conversion of spin currents into electromotive force, has been investigated in Pt thin films with changing the thickness of the Pt films. We measured the electric voltage due to the inverse spin-Hall effect induced by the spin pumping in Ni81Fe19/Pt bilayer systems with different Pt thickness films (d N=10, 30, 50, and 75 nm) at room temperature. The experimental results show that the signal induced by the inverse spin-Hall effect V ISHE is inversely proportional to the Pt thickness d N, which is well reproduced by a simple equivalent circuit model.