Comparison of 1200 V silicon carbide Schottky diodes and silicon power diodes
Comparison of 1200 V silicon carbide Schottky diodes and silicon power diodes
复制标题
1200V碳化硅肖特基二极管与硅功率二极管的比较
DOI：
10.1109/iecec.2000.870674
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
Edward Hanna
中科院分区：
文献类型：
--
作者：
H. Chang;R. Gupta;C. Winterhalter;Edward Hanna
本文介绍了1200 V碳化硅（SiC）肖特基二极管的设计和特性，使用p-n结势垒来控制漏电流。在150 A/cm/sup 2/时，正向压降为1.9 V，漏电流为300 /spl mu/A/cm/sup 2/。我们比较了SiC肖特基二极管与1200 V硅（Si）PiN二极管的性能，并针对军用和商用电机驱动应用进行了优化。使用半桥测试电路的功率损耗和相关的电压和电流应力的SiC肖特基二极管和Si PiN二极管进行评估。在25/spl deg/C和150/spl deg/C下对1200 V SiC肖特基二极管和Si PiN二极管进行了静态和动态表征。与最先进的Si PiN二极管相比，SiC肖特基二极管的总功率损耗降低了30%，这主要是由于SiC肖特基二极管中的反向恢复电荷可以忽略不计，其比最先进的Si功率二极管低20/spl倍。此外，由于SiC肖特基二极管的上级反向恢复性能，SiC肖特基二极管有助于将开关（在这种情况下使用IGBT）上的总电压和电流应力降低6/spl倍/。
This paper describes the design and characterization of 1200 V silicon carbide (SiC) Schottky diodes using a p-n junction barrier to control the leakage current. A low forward voltage drop of 1.9 V at 150 A/cm/sup 2/ and a low leakage current of 300 /spl mu/A/cm/sup 2/ are demonstrated. We compare the performance of SiC Schottky diodes with the 1200 V silicon (Si) PiN diodes fabricated and optimized for military and commercial motor drive applications. The power loss and related voltage and current stress of the SiC Schottky diodes and Si PiN diodes are evaluated using a half-bridge test circuit. The static and dynamic characterization of 1200 V SiC Schottky diodes and Si PiN diodes is performed at 25/spl deg/C and 150/spl deg/C. The SiC Schottky diode exhibits a 30% reduction in the total power loss as compared to the state-of-the-art Si PiN diodes, mainly due to a negligible reverse recovery charge in the SiC Schottky diode, which is 20/spl times/ lower than state-of-the-art Si power diode. Furthermore, the SiC Schottky diode contributes to lowering the overall voltage and current stress by a factor of 6/spl times/ on the switches (in this case IGBTs are used) due to the superior reverse recovery performance of the SiC Schottky diode.