Quantum Well Solar Cells: Principles, Recent Progress, and Potential
Quantum Well Solar Cells: Principles, Recent Progress, and Potential
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DOI：
10.1109/jphotov.2019.2892079
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发表时间：
2019-03-01
影响因子：
3
通讯作者：
Bedair, S. M.
中科院分区：
文献类型：
--
作者：
Sayed, Islam;Bedair, S. M.
量子阱太阳能电池作为下一代光伏技术的一种有前途的方法，在过去的几年里受到了极大的关注。量子威尔斯的材料生长和器件结构的最新发展为在下一代III/V多结太阳能电池中引入量子阱结构开辟了新的途径。本文综述了在p-i-n太阳电池的非故意掺杂区生长量子威尔斯的优点和挑战。重点介绍了1.1- 1.3eV应变平衡的InCaAs/GaAsP、1.6- 1.8eV应变平衡且晶格匹配的InGaAsP/InGaP和> 2.1eV应变的InGaN/GaN量子阱太阳电池的最新进展，包括量子阱生长条件的优化和太阳电池结构的改进。对于每种材料系统，与材料生长和器件性能，如临界层厚度约束，应变平衡，带隙可调性，载流子输运的限制，相关的挑战进行了讨论。每个量子阱太阳能电池的性能进行了比较，在相同的带隙范围内工作的体吸收剂，突出各自的优点。通过建模和最近的实验结果，无意的背景掺杂对载流子收集（漂移）的影响。综述了近年来提高量子阱区电场分布的方法。将量子阱结构在下一代多结器件的潜力进行了讨论。
Quantum well solar cells, as a promising approach for next-generation photovoltaic technology, have received great attention in the last few years. Recent developments in materials growth and device structures of quantum wells have opened up new avenues for the incorporation of quantum well structures in next-generation III/V multi-junction solar cells. In this paper, the advantages and challenges of growing quantum wells in the unintentionally doped (i) region of p-i-n solar cells are reviewed. We focus on the recent progress in 1.1-1.3 eV strain-balanced InCaAs/GaAsP, 1.6-1.8 eV strain-balanced and lattice-matched InGaAsP/InGaP, and >2.1 eV strained InGaN/GaN quantum well solar cells, including optimization of the quantum well growth conditions and improving the solar cell structure. For each material system, the challenges associated with materials growth and device performance such as critical layer thickness constraints, strain balance, bandgap tunability, and carrier transport limitations, are discussed. The performance of each quantum well solar cell is compared with bulk absorber operating in the same bandgap range, with the advantages of each being highlighted. The effect of the unintentional background doping on carrier collection (by drift) is presented through modeling and recent experimental results. The recent strategies to enhance the electric field distribution across the quantum well region are reviewed. The potential of incorporating quantum well structures in next-generation multi junction devices is also discussed.