L10 FePt–MgO perpendicular thin film deposited by alternating sputtering at elevated temperature
L10 FePt–MgO perpendicular thin film deposited by alternating sputtering at elevated temperature
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DOI：
10.1063/1.2176306
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发表时间：
2006-04
影响因子：
3.2
通讯作者：
Yingguo Peng;J. Zhu;D. Laughlin
中科院分区：
文献类型：
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作者：
Yingguo Peng;J. Zhu;D. Laughlin
采用高温交替溅射法制备了FePt-MgO两相薄膜。结果表明，L10 FePt晶粒沿薄膜厚度方向呈柱状生长，并具有（001）垂直织构，这是由（200）织构的结晶MgO底层所促进的。两相混合物中的非晶MgO在FePt晶粒之间形成均匀的分隔壁。其显微结构类似于钴合金/氧化物颗粒介质。
FePt–MgO two phase thin films have been obtained by an alternating sputtering method at elevated temperatures. It is found that the L10 FePt grains grow in a columnar manner through the thickness of the film and possess a (001) perpendicular texture promoted by the (200)-textured crystalline MgO underlayer. The amorphous MgO in the two phase mixture forms uniform separation walls between FePt grains. The microstructure is similar to that of Co-alloy/oxide granular media.