Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layer
Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layer
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DOI：
10.1109/2944.605654
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发表时间：
1997-04
影响因子：
4.9
通讯作者：
H. Shoji;Y. Nakata;K. Mukai;Y. Sugiyama;M. Sugawara;N. Yokoyama;H. Ishikawa
中科院分区：
文献类型：
--
作者：
H. Shoji;Y. Nakata;K. Mukai;Y. Sugiyama;M. Sugawara;N. Yokoyama;H. Ishikawa
在多层量子点结构的自形成量子点激光器中实现了室温下基态连续波运转。通过系统的研究，首次清楚地证明了通过改变点层数和腔损耗，激光波长从高阶子带到基态的不连续位移。在不同子带振荡的激光器在光谱特性和阈值电流方面表现出不同的温度行为，这与量子点的发射效率和载流子到高阶子带的热激发密切相关。在60-200 K温度范围内，激光器的两端面均镀有高反射膜，其特征温度超过300 K。最后讨论了今后激光器性能改进的前景。
Room-temperature continuous-wave (CW) operation at the ground state has been achieved in self-formed quantum-dot lasers with multistacked dot layer. By systematic investigation, discontinuous shifts of lasing wavelength from the high-order subbands to the ground state are clearly demonstrated for the first time by varying the number of dot layers and the cavity loss. Lasers oscillating at different subbands exhibit different behaviors against temperature both in the spectral characteristics and in the threshold currents, which are strongly related to emission efficiency of quantum dots and thermal excitation of carriers to higher order subbands. High characteristic temperature over 300 K has been achieved in a laser with high-reflection coating on both facets in the temperature range 60-200 K. Future prospects of improvement in the laser characteristics are also discussed.