New Improved Model and Accurate Analytical Response of SiPMs Coupled to Read-Out Electronics
New Improved Model and Accurate Analytical Response of SiPMs Coupled to Read-Out Electronics
复制标题
与读出电子器件耦合的 SiPM 的新改进模型和精确分析响应
DOI：
10.1109/jsen.2015.2464077
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发表时间：
2016
影响因子：
4.3
通讯作者：
G. Romeo
中科院分区：
文献类型：
--
作者：
D. Marano;G. Bonanno;S. Garozzo;A. Grillo;G. Romeo
在这封信中，最近发表的硅光电倍增管（SiPM）传感器模型被有益地扩展到包括读出电子器件对输出脉冲波形形状的重要影响。提出了一种改进的解析表达式，同时考虑了耦合前端的加载效应和带宽限制，可以准确地再现和预测SiPM的动态响应。实际检测系统的实验验证了SiPM模型和分析结果。
In this letter, a recently published model of silicon photomultiplier (SiPM) sensors is profitably extended to include the important effects of the read-out electronics on the shape of the output pulse waveforms. An improved analytical expression has been developed, also accounting for the loading effect and bandwidth limitation of the coupled front-end, through which the SiPM dynamic response can be accurately reproduced and predicted. Experimental tests on actual detection systems corroborate the SiPM model and the analytical results.