Radiation effects at cryogenic temperatures in Si-JFET, GaAs MESFET, and MOSFET devices
Radiation effects at cryogenic temperatures in Si-JFET, GaAs MESFET, and MOSFET devices
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Si-JFET、GaAs MESFET 和 MOSFET 器件中低温下的辐射效应
DOI：
10.1109/23.489425
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发表时间：
1995
影响因子：
17.3
通讯作者：
V. Radeka
中科院分区：
文献类型：
--
作者：
M. Citterio;S. Rescia;V. Radeka
在强子对撞机实验中，液体电离室量热法的前端电子设备可能会暴露在低温环境中大量的电离辐射和中子注量中。对采用抗辐射技术制造的设备的测量表明，存在能够在这些条件下工作的设备。几个系列的器件（硅结型场效应晶体管，抗辐射MOSFET和GaAs MESFETs）已被辐照和测试在一个稳定的低温下高达55 Mrad的电离辐射剂量和高达4/spl倍/10/sup 14/ n/cm/sup 2/的中子注量。辐射对直流特性和噪声的影响。
Front-end electronics for liquid ionization chamber calorimetry at hadron collider experiments may be exposed to substantial levels of ionizing radiation and neutron fluences in a cryogenic environment. Measurements of devices built with rad-hard technologies have shown that devices able to operate in these conditions exist. Several families of devices (Si-JFETs, rad-hard MOSFETs, and GaAs MESFETs) have been irradiated and tested at a stable cryogenic temperature up to doses of 55 Mrad of ionizing radiation and up to neutron fluences of 4/spl times/10/sup 14/ n/cm/sup 2/. Radiation effects on DC characteristics and on noise will be presented.