Modulation doping of a Mott quantum well by a proximate polar discontinuity
Modulation doping of a Mott quantum well by a proximate polar discontinuity
复制标题
DOI：
10.1103/physrevb.79.075415
复制
发表时间：
2008-10
影响因子：
3.7
通讯作者：
T. Higuchi;Y. Hotta;T. Susaki;A. Fujimori;H. Hwang
中科院分区：
文献类型：
--
作者：
T. Higuchi;Y. Hotta;T. Susaki;A. Fujimori;H. Hwang
我们给出了在LaAlO_3(001)极表面附近的LaAl_3/LaVO_3/LaAl_3量子阱中空穴注入的证据。当表面接近LaVO_3层时，在10~(-15)个单位电池的特征耦合长度以下，观察到电阻指数下降和正Seebeck系数减小。我们将这一行为归因于从AlO2终止的LaAlO_3表面的原子重建到钒价态的电子重建的交叉。这些结果提出了氧化物薄膜异质结中可调谐空穴掺杂的一般方法。
We present evidence for hole injection into LaAlO3/LaVO3/LaAlO3 quantum wells near a polar surface of LaAlO3 (001). As the surface is brought in proximity to the LaVO3 layer, an exponential drop in resistance and a decreasing positive Seebeck coefficient is observed below a characteristic coupling length of 10-15 unit cells. We attribute this behavior to a crossover from an atomic reconstruction of the AlO2-terminated LaAlO3 surface to an electronic reconstruction of the vanadium valence. These results suggest a general approach to tunable hole-doping in oxide thin film heterostructures.