Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3
Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3
复制标题
使用乙基环戊二烯基铟 (ln-EtCp) 和 H2O 和 O3 通过低温 ALD 制造的碳掺杂 In2O3 薄膜的氧化物 TFT 的特性
DOI：
10.1149/09203.0003ecst
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
Ogura Atsushi
中科院分区：
文献类型：
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作者：
Kobayashi Riku;Nabatame Toshihide;Kurishima Kazunori;Onaya Takashi;Ohi Akihiko;Ikeda Naoki;Nagata Takahiro;Tsukagoshi Kazuhito;Ogura Atsushi
研究了不同原子层沉积（ALD）工艺条件下，In 2 O3薄膜的生长特性，如生长温度、InEtCp前驱体和H2O/O3氧化剂气体的用量等。当InEtCp和H2O/O3剂量分别超过27.6 μmol和0.09/2.94 mmol时，在In 2 O3膜沉积中观察到自限ALD窗口，而与生长温度无关。在150、170和200 ℃下，In 2 O3膜的In：O：C比为1：1.16：0.04（InO 1. 16C 04）、1：1.16：0.03（InO 1. 16C 03)和1：1.2：0（InO 1. 2），分别为：我们发现，碳掺杂（InO 1. 16C 04、InO 1. 16C 03)和无碳的In 2 O3（InO 1. 2)通过改变生长温度可以容易地沉积薄膜。所有的膜具有无定形结构。InO1. 16C 04 TFT在150 ºC下在O3中而没有InO 1的金属化后退火后从类金属导体急剧变为半导体。2个TFT发生变化。这被认为是由于抑制了InO 1中的过剩氧空位。16C 04沟道的影响。InO1。16C 04-结果表明，该薄膜的SS（0.37 V/dec）、Ion/Ioff（1.0× 108）、Vth（3.5 V）和饱和场效应迁移率（20.4 cm 2/Vs）等特性均较上级。因此，碳掺杂的n2 O3是一种有前途的材料，作为一个灵活的TFT，其中低温形成是必不可少的沟道。
We investigated characteristic of the In2O3 films deposited by various atomic layer deposition (ALD) conditions such as growth temperature and doses of ethylcyclopentadienyl indium (InEtCp) precursor and H2O/O3 oxidant gases. A self-limited ALD window was observed in the In2O3 film deposition when an InEtCp and H2O/O3 doses were supplied over 27.6 µmol and 0.09/2.94 mmol, respectively, regardless of the growth temperature. The ratio of In: O: C of the In2O3 films at 150, 170 and 200 ºC were 1: 1.16: 0.04 (InO1. 16C0. 04), 1: 1.16: 0.03 (InO1. 16C0. 03) and 1: 1.2: 0 (InO1. 2), respectively. We found that the carbon-doped (InO1. 16C0. 04, InO1. 16C0. 03) and carbon-free In2O3 (InO1. 2) films could be easily deposited by changing the growth temperature. All films had an amorphous structure. The electrical properties of InO1. 16C0. 04 TFT changed dramatically from metal-like conductor to semiconductor after post-metallization annealing at 150 ºC in O3 while no InO1. 2 TFT changed. This is thought to be due to the suppression of excess oxygen vacancies in InO1. 16C0. 04 channel by effect of doped carbon. The InO1. 16C0. 04-containing TFT exhibited superior characteristics of SS (0.37 V/dec), Ion/Ioff (1.0× 108), Vth (3.5 V) and saturation field effect mobility (20.4 cm2/Vs). Therefore, carbon-doped n2O3 is a promising material as a channel of a flexible TFT where low temperature formation is essential.