Ag on Si(001): Growth behavior of the annealed surface.
Ag on Si(001): Growth behavior of the annealed surface.
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Si(001) 上的 Ag：退火表面的生长行为。
DOI：
10.1103/physrevb.47.10947
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
J. Nogami
中科院分区：
文献类型：
--
作者：
Lin Xf;Wan Kj;J. Nogami
Ag以Stranski-Krastanov生长模式生长在Si（001）表面上。我们已经研究了该系统在高温下的行为与扫描隧道显微镜和低能电子衍射，集中在生长的早期阶段，形成一个二维（2D）层。该2D层是良好有序的，并且其饱和覆盖率被确定为0.5个Ag单层。随着Ag沉积的增加从2D到3D生长的转变是不寻常的，因为观察到2D层在3D岛开始生长之前变粗糙。当Ag的密度超过2D层的饱和覆盖率时，这通过Ag的次表面调节来解释
Ag grows on the Si(001) surface in the Stranski-Krastanov growth mode. We have studied the behavior for this system at elevated temperatures with scanning tunneling microscopy and low-energy electron diffraction, concentrating on early stages of growth where a two-dimensional (2D) layer is formed. This 2D layer is well ordered and its saturation coverage is determined to be 0.5 monolayers of Ag. The transition from 2D to 3D growth with increasing Ag deposition is unusual in that the 2D layer is observed to roughen before 3D islands start to grow. This is explained by the subsurface accommodation of Ag when its density exceeds the saturation coverage of the 2D layer