Doping dependence of the optical dielectric function in n-type germanium
Doping dependence of the optical dielectric function in n-type germanium
复制标题
n 型锗中光学介电功能的掺杂依赖性
DOI：
--
复制
发表时间：
2019
影响因子：
3.2
通讯作者：
J. Menéndez
中科院分区：
文献类型：
--
作者：
Chi Xu;J. Kouvetakis;J. Menéndez
用光致发光和紫外可见椭偏测量方法研究了n型Ge中最重要的光学跃迁(E0、EIND、E1、E1、 + Δ1、E0‘和E2)的掺杂依赖关系。通过使用高活度的Ge源，如Ge_3H_8和Ge_4H_10，以及新一代掺杂前驱体P(GeH_3)_3、As(GeH_3)_3和SbD_3，获得了接近1.5 × 1020 cm−_3的掺杂水平，具有平坦的掺杂分布、陡峭的n/i界面和接近于1的掺杂激活比。良好的样品质量使在足够宽的掺杂范围内进行的测量能够证明，与先前的假设相反，电子能带在掺杂后不会发生严格的移动，并且对带隙重整化的不同贡献取决于施主。能带填充效应的简单模型定量地解释了临界点参数如振幅和相角对掺杂的依赖关系。利用光致发光和紫外可见椭圆偏振光谱方法研究了n型Ge中最重要的光学跃迁(E0、EIND、E1、E1 + Δ1、E0‘和E2)的掺杂依赖关系。通过使用高活度的Ge源，如Ge_3H_8和Ge_4H_10，以及新一代掺杂前驱体P(GeH_3)_3、As(GeH_3)_3和SbD_3，获得了接近1.5 × 1020 cm−_3的掺杂水平，具有平坦的掺杂分布、陡峭的n/i界面和接近于1的掺杂激活比。良好的样品质量使在足够宽的掺杂范围内进行的测量能够证明，与先前的假设相反，电子能带在掺杂后不会发生严格的移动，并且对带隙重整化的不同贡献取决于施主。能带填充效应的简单模型定量地解释了临界点参数如振幅和相角对掺杂的依赖关系。这里提出的分析给出了对物理学的新见解。
The doping dependence of the most important optical transitions in n-type Ge (E0, Eind, E1, E1 + Δ1, E0′, and E2) has been studied using photoluminescence and UV-Vis ellipsometry methods. By using high activity Ge sources, such as Ge3H8 and Ge4H10, and new-generation doping precursors, including P(GeH3)3, As(GeH3)3, and SbD3, doping levels approaching 1.5 × 1020 cm−3 have been achieved with flat dopant profiles, abrupt n/i interfaces, and close-to-unity dopant activation ratios. The excellent sample quality enabled measurements over sufficiently broad doping ranges to demonstrate, contrary to prior assumptions, that the electronic energy bands do not shift rigidly upon doping and that the different contributions to bandgap renormalization are donor-dependent. It is also shown that simple models of band filling effects provide a quantitative explanation of the doping dependence of critical point parameters such as amplitudes and phase angles. The analysis presented here yields new insights into the physics of highly-doped semiconductor and should facilitate the design of novel Ge-based group-IV microelectronic and photoelectronic devices.The doping dependence of the most important optical transitions in n-type Ge (E0, Eind, E1, E1 + Δ1, E0′, and E2) has been studied using photoluminescence and UV-Vis ellipsometry methods. By using high activity Ge sources, such as Ge3H8 and Ge4H10, and new-generation doping precursors, including P(GeH3)3, As(GeH3)3, and SbD3, doping levels approaching 1.5 × 1020 cm−3 have been achieved with flat dopant profiles, abrupt n/i interfaces, and close-to-unity dopant activation ratios. The excellent sample quality enabled measurements over sufficiently broad doping ranges to demonstrate, contrary to prior assumptions, that the electronic energy bands do not shift rigidly upon doping and that the different contributions to bandgap renormalization are donor-dependent. It is also shown that simple models of band filling effects provide a quantitative explanation of the doping dependence of critical point parameters such as amplitudes and phase angles. The analysis presented here yields new insights into the physics...