Phase Separation in InGaN/GaN Multiple Quantum Wells
Phase Separation in InGaN/GaN Multiple Quantum Wells
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DOI：
10.1557/proc-482-985
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发表时间：
1998-06
期刊：
影响因子：
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通讯作者：
M. McCluskey;L. Romano;B. Krusor;D. Bour;C. Chua;N. Johnson;K. Yu
中科院分区：
文献类型：
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作者：
M. McCluskey;L. Romano;B. Krusor;D. Bour;C. Chua;N. Johnson;K. Yu
给出了In0.27Ga0.73N/GaN多量子阱(MQW)中相分离的证据。在1100℃下热处理4min后，2.95 eV处的吸收阈值被2.65 eV处的宽峰取代。这一峰归因于在有源区形成了富InGaN相。X射线衍射测量表明，衍射峰向GaN方向移动，这与In-贫相的形成一致。
Evidence is presented for phase separation in In 0.27 Ga 0.73 N/GaN multiple quantum wells (MQW's). After annealing for 4 min at a temperature of 1100 °C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of Inrich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase.