Obvious efficiency enhancement of organic light-emitting diodes by parylene-N buffer layer
Obvious efficiency enhancement of organic light-emitting diodes by parylene-N buffer layer
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DOI：
10.1063/1.4704365
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发表时间：
2012-04
影响因子：
4
通讯作者：
Y. M. Hu;Yao He;Xiaoqing Chen;Y. Zhan;Zhengyi Sun;Y. You;X. Hou
中科院分区：
文献类型：
--
作者：
Y. M. Hu;Yao He;Xiaoqing Chen;Y. Zhan;Zhengyi Sun;Y. You;X. Hou
在典型的有机发光二极管 (OLED) 中，基于 N, N'-双(萘-1-基)-N, N'-双(苯基)联苯胺 (NPB) 和三 (8-羟基喹啉) 铝 (Alq3) 的阳极和有机层之间插入聚对二甲苯-N (PPXN) 缓冲层，可显着提高电流效率。与无缓冲区结构相比，增强效果可提高 1.7 倍。分析表明，缓冲层起到了阻挡空穴流和电子流的作用。空穴注入能否增强取决于缓冲液-有机界面处的电子积累。插入 PPXN 缓冲器会修改器件中的载流子平衡，从而导致观察到的效率提高。
A parylene-N (PPXN) buffer layer inserted between anode and organic layers in typical organic light-emitting diodes (OLEDs) based on N, N′-bis(naphthalene-1-yl)-N, N′-bis(phenyl) benzidine (NPB) and tris (8-hydroxyquinolato) aluminum (Alq3) results in significant enhancement of the current efficiency. The enhancement can be 1.7 times higher compared to that of the buffer-free structure. Analyzing indicates that the buffer plays a role of blocking both the hole and electron current. Whether hole injection can be enhanced depends on electron accumulation at the buffer-organic interface. Inserting the PPXN buffer modifies carrier balance in the device, leading to the observed efficiency enhancement.