Impurity Conduction Observed in Al-Doped 6H-SiC
Impurity Conduction Observed in Al-Doped 6H-SiC
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在掺铝 6H-SiC 中观察到的杂质传导
DOI：
10.4028/www.scientific.net/msf.457-460.685
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
G. Pensl
中科院分区：
文献类型：
--
作者：
M. Krieger;K. Semmelroth;G. Pensl
利用导纳光谱和霍尔效应研究了掺杂不同浓度铝受体的6H-SiC单晶。在低于160K的温度下观察到热激活杂质传导。17meV的活化能是由导纳光谱和温度相关电阻率测量得到的。霍尔系数在跳变传导占主导的温度范围内表现为符号反转。
6H-SiC single crystals doped with aluminum acceptors at different concentrations were investigated with admittance spectroscopy and Hall effect. Thermally activated impurity conduction was observed at temperatures below 160K. The activation energy of 17meV was obtained from admittance spectroscopy as well as from temperature-dependent resistivity measurements. The Hall coefficient showed a sign reversal in the temperature range where hopping conduction dominates.