Photoelectrochemical etching measurement of defect density in GaN grown by nanoheteroepitaxy
Photoelectrochemical etching measurement of defect density in GaN grown by nanoheteroepitaxy
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DOI：
10.1063/1.2197059
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发表时间：
2006-05
影响因子：
3.2
通讯作者：
M. Ferdous;X. Sun;X. Wang;Michael N. Fairchild;S. Hersee
中科院分区：
文献类型：
--
作者：
M. Ferdous;X. Sun;X. Wang;Michael N. Fairchild;S. Hersee
用光电化学腐蚀法测量了n型GaN中的位错密度。与同时生长的平面GaN相比，观察到位错密度降低了10倍。横截面透射电子显微镜的研究表明，缺陷减少是由于相互抵消的位错具有相等和相反的伯格矢量。纳米异质外延样品表现出显着更高的光致发光强度和更高的电子迁移率比平面参考样品。
The density of dislocations in n-type GaN was measured by photoelectrochemical etching. A 10× reduction in dislocation density was observed compared to planar GaN grown at the same time. Cross-sectional transmission electron microscopy studies indicate that defect reduction is due to the mutual cancellation of dislocations with equal and opposite Burger’s vectors. The nanoheteroepitaxy sample exhibited significantly higher photoluminescence intensity and higher electron mobility than the planar reference sample.