Memristive Behavior Enabled by Amorphous–Crystalline 2D Oxide Heterostructure
Memristive Behavior Enabled by Amorphous–Crystalline 2D Oxide Heterostructure
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DOI：
10.1002/adma.202000801
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发表时间：
2020-04
影响因子：
29.4
通讯作者：
Xin Yin;Yizhan Wang;Tzu-Hsuan Chang;Pei Zhang;Jun Li;P. Xue;Yin Long;J. Shohet;P. Voyles-P.-Voyl
中科院分区：
文献类型：
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作者：
Xin Yin;Yizhan Wang;Tzu-Hsuan Chang;Pei Zhang;Jun Li;P. Xue;Yin Long;J. Shohet;P. Voyles-P.-Voyl
通过原子层沉积（ALD）在原子薄的单晶ZnO纳米片上沉积几纳米的非晶Al2O3层，证明了在非晶2D氧化物异质结构中出现忆阻行为。在经典氧空位导电通道的基础上，确定了导电机理。ZnO纳米片为氧空位提供了二维载体，而无定形Al2O3则促进了氧空位的生成和稳定。高阻态的传导机制遵循Poole-Frenkel发射，低阻态的传导机制符合Mott-Gurney定律。从拟合曲线的斜率来看，低阻态的迁移率估计为≈2400 cm2 V−1 s−1，这是半导体氧化物中报道的最高值。在高温退火消除氧空位后，将Al掺杂到ZnO纳米片中，忆阻行为消失，进一步证实了氧空位是造成ZnO纳米片忆阻行为的原因。二维异质界面为高性能忆阻器器件的新设计提供了机会。
The emergence of memristive behavior in amorphous–crystalline 2D oxide heterostructures, which are synthesized by atomic layer deposition (ALD) of a few‐nanometer amorphous Al2O3 layers onto atomically thin single‐crystalline ZnO nanosheets, is demonstrated. The conduction mechanism is identified based on classic oxygen vacancy conductive channels. ZnO nanosheets provide a 2D host for oxygen vacancies, while the amorphous Al2O3 facilitates the generation and stabilization of the oxygen vacancies. The conduction mechanism in the high‐resistance state follows Poole–Frenkel emission, and in the the low‐resistance state is fitted by the Mott–Gurney law. From the slope of the fitting curve, the mobility in the low‐resistance state is estimated to be ≈2400 cm2 V−1 s−1, which is the highest value reported in semiconductor oxides. When annealed at high temperature to eliminate oxygen vacancies, Al is doped into the ZnO nanosheet, and the memristive behavior disappears, further confirming the oxygen vacancies as being responsible for the memristive behavior. The 2D heterointerface offers opportunities for new design of high‐performance memristor devices.