Inversion domains in GaN grown on sapphire
Inversion domains in GaN grown on sapphire
复制标题
DOI：
10.1063/1.117648
复制
发表时间：
1996-10-14
影响因子：
4
通讯作者：
OKeefe, MA
中科院分区：
文献类型：
--
作者：
Romano, LT;Northrup, JE;OKeefe, MA
在（0001）蓝宝石上生长的GaN薄膜中观察到的平面缺陷已经通过高分辨率透射电子显微镜、多重暗场成像和会聚束电子衍射技术的组合被识别为反转畴边界（IDB）。通过分子束外延（MBE），金属有机物气相沉积（MOCVD），和氢化物气相外延（HVPE）生长的薄膜进行了研究，并发现所有含有IDBs。MBE和HVPE膜中的IDB从界面延伸到膜表面，并形成在MBE膜中的宽度为3至20 nm和在HVPE膜中的宽度为100 nm的柱状域。对于所研究的膜，MBE膜具有最高的密度，并且MOCVD膜具有最低的IDBs密度。反型畴（ID）的成核可能是由GaN/蓝宝石界面的台阶相关的不均匀性引起的。(C)1996年美国物理学会。
Planar defects observed in GaN films grown on (0001) sapphire have been identified as inversion domain boundaries (IDBs) by a combination of high resolution transmission electron microscopy, multiple dark field imaging, and convergent beam electron diffraction techniques. Films grown by molecular beam epitaxy (MBE), metalorganic vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE) were investigated and all were found to contain IDBs. The IDBs in the MBE and HVPE films extended from the interface to the film surface and formed columnar domains that ranged in width from 3 to 20 nm in the MBE films and up to 100 nm in the HVPE films. For the films investigated, the MBE films had the highest density, and the MOCVD films had the lowest density of IDBs. The nucleation of inversion domains (IDs) may result from step-related inhomogeneities of the GaN/sapphire interface. (C) 1996 American Institute of Physics.