High-performance 1.55-/spl mu/m wavelength GaInAsP-InP distributed-feedback lasers with wirelike active regions
High-performance 1.55-/spl mu/m wavelength GaInAsP-InP distributed-feedback lasers with wirelike active regions
复制标题
具有线状有源区域的高性能 1.55-/spl mu/m 波长 GaInAsP-InP 分布式反馈激光器
DOI：
10.1109/2944.954137
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发表时间：
2001
影响因子：
4.9
通讯作者：
S. Arai
中科院分区：
文献类型：
--
作者：
N. Nunoya;M. Nakamura;M. Morshed;S. Tamura;S. Arai
采用电子束光刻、CH/sub 4/H/sub 2/-反应离子刻蚀和有机金属气相外延再生长技术，制备了高性能1.55 μ/m波长GaInAsP-InP强折射率耦合增益匹配分布反馈（DFB）激光器，其折射率耦合系数大于300 cm/sup-1/.为了设计低阈值电流工作的激光器，从理论和实验两方面研究了阈值电流与量子威尔斯阱数和线宽的关系。在条宽为19.5 μ m，腔长为600 μ m的条件下，获得了1.55 μ m DFB激光器中最低的阈值电流密度94 A/cm/sup 2/。此外，在室温下，连续波条件下，2.3-/spl μ/m宽的掩埋异质结构与200-/spl μ/m长的腔也实现了0.7 mA的创纪录的低阈值电流。最后，我们确认了由于驻波轮廓和线状有源区之间的增益匹配效应，稳定的单模操作。
High-performance 1.55-/spl mu/m wavelength GaInAsP-InP strongly index-coupled and gain-matched distributed-feedback (DFB) lasers with periodic wirelike active regions mere fabricated by electron beam lithography, CH/sub 4//H/sub 2/-reactive ion etching, and organometallic vapor-phase epitaxial regrowth, whose index-coupling coefficient was more than 300 cm/sup -1/. In order to design lasers for low threshold current operation, threshold current dependences on the number of quantum wells and the wire width mere investigated both theoretically and experimentally. A record low threshold current density of 94 A/cm/sup 2/ among 1.55-/spl mu/m DFB lasers was successfully obtained for a stripe width of 19.5 /spl mu/m and a cavity length of 600 /spl mu/m. Moreover, a record low threshold current of 0.7 mA was also realized at room temperature under CW condition for a 2.3-/spl mu/m-wide buried heterostructure with a 200-/spl mu/m-long cavity. Finally, we confirmed stable single-mode operation due to a gain-matching effect between the standing-wave profile and the wirelike active region.