Photovoltage characterization of CuAlO2 crystallites
Photovoltage characterization of CuAlO2 crystallites
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DOI：
10.1063/1.1776611
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发表时间：
2004-07
影响因子：
4
通讯作者：
T. Dittrich;L. Dloczik;T. Guminskaya;M. Lux‐Steiner;N. Grigorieva;I. Urban
中科院分区：
文献类型：
--
作者：
T. Dittrich;L. Dloczik;T. Guminskaya;M. Lux‐Steiner;N. Grigorieva;I. Urban
在475°C下通过离子交换反应制备铜铁矿相CuAlO 2。通过X射线衍射、透射电子显微镜、电子衍射、瞬态和光谱光电压（PV）和漫反射光谱对样品进行了表征。所产生的CuAlO 2微晶是p型的并且具有高电子质量，即，PV没有观察到由禁带中的深态引起的电子跃迁。在80 ~ 600 K之间测量了CuAlO_2的光学带隙随温度的变化。CuAlO_2的禁带宽度为3.61eV，接近于0 K。PV信号的猝灭是以1.8eV的激活能热激活的。
The delafossite phase of CuAlO2 has been prepared by ion exchange reaction at 475°C. The samples were characterized by x-ray diffraction, transmission electron microscopy, electron diffraction, transient and spectral photovoltage (PV), and diffuse reflectance spectroscopy. The produced CuAlO2 crystallites are p-type and of high electronic quality, i.e., no electronic transitions induced by deep states in the forbidden gap have been observed by PV. The temperature dependence of the optical band gap of CuAlO2 was measured between 80 and 600K. The band gap of CuAlO2 approximated to 0K amounts to 3.61eV. The quenching of the PV signal is thermally activated with an activation energy of 1.8eV.