Effects of GaxZn1-xO nanorods on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes
Effects of GaxZn1-xO nanorods on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes
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GaxZn1-xO纳米棒对n-ZnO纳米棒/p-GaN异质结发光二极管光电性能的影响
DOI：
10.1039/c7ra09250d
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发表时间：
2017-01-01
期刊：
影响因子：
3.9
通讯作者：
Xu, Bingshe
中科院分区：
文献类型：
--
作者：
Li, Rui;Yu, Chunyan;Xu, Bingshe
采用低温水热法在 pGaN/Al2O3 衬底上合成了 Ga 掺杂 ZnO 纳米棒阵列。通过 XRD 和 FE-SEM 测量了样品的结构和形貌。结果表明，Ga掺杂ZnO纳米棒具有优异的结晶度和与衬底良好的外延关系。随着Ga掺杂量的增加，ZnO纳米棒将沿[001]方向快速生长，导致平均直径减小。同时，Ga的掺入也显着影响n-ZnO纳米棒/p-GaN异质结发光二极管的光电性能。从光致发光光谱发现，Ga掺杂可以通过ZnO纳米棒的紫外和可见光发射峰强度比来有效调控。 I-V特性曲线表明，随着Ga掺杂浓度的增加，n-ZnO纳米棒/p-GaN异质结发光二极管将具有更好的导电性。最终异质结发光二极管在正向偏压下实现绿光发射。
A Ga-doped ZnO nanorod array has been synthesized on a pGaN/Al2O3 substrate by a hydrothermal method at low temperature. The structures and morphologies of the samples were measured by XRD and FE-SEM. The results show that the Ga-doped ZnO nanorods have excellent crystallinity and good epitaxial relationships with the substrate. With increasing Ga doping, the ZnO nanorods will grow along the [001] direction rapidly resulting in a decreasing average diameter. At the same time, the incorporation of Ga also signicantly affects the optical and electrical properties of the n-ZnO nanorods/p-GaN heterojunction light-emitting diode. From the photoluminescence spectrum, it was found that Ga doping can be effectively regulated by the UV and visible emission peak intensity ratio of the ZnO nanorods. The I–V characteristics curve indicates that the n-ZnO nanorods/p-GaN heterojunction light-emitting diode will have better conductivity with increasing Ga doping concentration. Finally, the heterojunction light-emitting diode achieves green light emission under forward bias.