Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)
Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)
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DOI：
10.1063/1.3384997
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发表时间：
2010-04
影响因子：
4
通讯作者：
K. D. Keyser;C. V. Bockstael;R. Meirhaeghe;C. Detavernier;E. Verleysen;H. Bender;W. Vandervorst;J. Jordan-Sweet;C. Lavoie
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文献类型：
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作者：
K. D. Keyser;C. V. Bockstael;R. Meirhaeghe;C. Detavernier;E. Verleysen;H. Bender;W. Vandervorst;J. Jordan-Sweet;C. Lavoie
通过在绝缘体上硅 (100) 基板上溅射沉积的镍薄膜 (1–10 nm) 研究硅化镍薄膜的固态反应和团聚。对于以 3 °C/s 升温速率进行的典型退火，5–10 nm 的 Ni 薄膜与硅反应并形成 NiSi，其在 550–650 °C 时聚集，而厚度为 3.7 nm 或更小的薄膜被发现形成类似外延的硅化镍层。所得薄膜显示出更高的热稳定性，在高达 800 °C 的温度下电阻率较低。
The solid-state reaction and agglomeration of thin nickel-silicide films was investigated from sputter deposited nickel films (1–10 nm) on silicon-on-insulator (100) substrates. For typical anneals at a ramp rate of 3 °C/s, 5–10 nm Ni films react with silicon and form NiSi, which agglomerates at 550–650 °C, whereas films with a thickness of 3.7 nm of less were found to form an epitaxylike nickel-silicide layer. The resulting films show an increased thermal stability with a low electrical resistivity up to 800 °C.