Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor
Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor
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DOI：
10.1063/1.5115013
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发表时间：
2019-10
影响因子：
4
通讯作者：
J. S. Lundh;B. Chatterjee;Yiwen Song;A. Baca;R. Kaplar;T. Beechem;A. Allerman;A. Armstrong;B. Klein;Anushka Bansal;D. Talreja;A. Pogrebnyakov;E. Heller;V. Gopalan;J. Redwing;B. Foley;Sukwon Choi
中科院分区：
文献类型：
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作者：
J. S. Lundh;B. Chatterjee;Yiwen Song;A. Baca;R. Kaplar;T. Beechem;A. Allerman;A. Armstrong;B. Klein;Anushka Bansal;D. Talreja;A. Pogrebnyakov;E. Heller;V. Gopalan;J. Redwing;B. Foley;Sukwon Choi
Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1−xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electronic model of the开发了AL0.30.70N通道HEMT来验证实验结果并研究潜在的设备级热管理，而这种III-N三元合金系统的热导率低导致在室温下更加自热，在室温下，Alxga1-XN的电源供应量很高。用超级带隙材料（例如氮化铝）（ALXGA1-XN）实现AL0.30GA0.70N通道的多维热表征。渠道hemt被开发到验证实验结果并研究潜在的设备级热管理。
Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1−xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1−xN may open the door for extreme temperature applications.Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1−xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1−xN may open the door for extreme temperature applications.