Small-sized optical gate switch using Ge2Sb2Te5 phase-change material integrated with silicon waveguide
Small-sized optical gate switch using Ge2Sb2Te5 phase-change material integrated with silicon waveguide
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DOI：
10.1049/el.2010.3588
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发表时间：
2010-03-04
影响因子：
1.1
通讯作者：
Tsuda, H.
中科院分区：
文献类型：
--
作者：
Ikuma, Y.;Shoji, Y.;Tsuda, H.
报道了一种利用Ge_2Sb_2Te_5相变材料与硅波导集成的光门开关。开关是非常小的（类似于2 μ m），由于在结晶状态和非结晶状态之间的吸收系数的大的差异。制作了开关样机，并通过激光脉冲辐照成功地实现了开关从透明的开态到不透明的关态的转换。在75 nm的波长范围内实现了大于12.5 dB的消光比。
An optical gate switch using Ge2Sb2Te5 phase-change material integrated with a silicon waveguide is reported. The switch is very small (similar to 2 mu m) owing to the large difference in absorption coefficient between the crystalline state and the amorphous state. The prototype switch has been fabricated and successfully switched from the transparent on-state to the opaque off-state by laser pulse irradiation. An extinction ratio of more than 12.5 dB was achieved over a wavelength range of 75 nm.