Demonstration of a GaN-spacer high electron mobility transistor with low alloy scattering
Demonstration of a GaN-spacer high electron mobility transistor with low alloy scattering
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DOI：
10.1002/pssa.200461563
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发表时间：
2005-04-01
影响因子：
2
通讯作者：
Mishra, UK
中科院分区：
文献类型：
--
作者：
Palacios, T;Shen, L;Mishra, UK
报道了一种基于 GaN 间隔物的新型高电子迁移率晶体管 (HEMT)。为了将二维电子气限制在这种无 AlGaN HEMT 中，使用了 GaN/超薄 AlN/GaN 赝异质结。有效导带不连续性由 AlN 极化感应电场给出。由于合金和实际空间传输散射的减少以及欧姆接触电阻的降低，这种新型晶体管表现出比标准 HEMT 更优越的综合性能。 (c) 2005 WILEY-VCH Verlag GmbH & Co.
A new kind of high electron mobility transistor (HEMT) based on a GaN-spacer is reported. To confine the two-dimensional electron gas in this AlGaN-free HEMT, a GaN/ultrathin AlN/GaN pseudo-heterojunction has been used. The effective conduction band discontinuity is given by the AlN polarization-induced electric field. This new transistor shows a superior general performance than the standard HEMT due to a decrease in the alloy and real space transfer scattering, as well as lower ohmic contact resistance. (c) 2005 WILEY-VCH Verlag GmbH & Co.