Valence band structure of SnTe
Valence band structure of SnTe
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DOI：
10.1088/0022-3727/1/7/304
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发表时间：
1968-07
期刊：
影响因子：
--
通讯作者：
L. M. Rogers
中科院分区：
文献类型：
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作者：
L. M. Rogers
使用二价带模型定量解释了载流子浓度范围 4 × 1019-2 × 1021 cm−3 的 p 型 SnTe 的室温电学和热学性质，其中主轻质量带始终是高度非抛物线的，而重质量带是抛物线的。确定了模型的带参数。该理论基于具有旋转和反射对称性的能量表面的科恩色散定律。 SnTe 和 PbTe 之间的能带结构非常相似。看起来 SnTe 的 300°K 能带参数与 Rogers 给出的 PbTe 的 0°K 能带参数非常相似，但 SnTe 中价带边缘之间的能量分离要大得多。在室温下，谷内声模晶格散射始终占主导地位。
Room-temperature electrical and thermal properties of p-type SnTe for the carrier concentration range 4 × 1019-2 × 1021 cm−3 have been quantitatively explained using a two-valence-band model in which the principal light mass band is always highly non-parabolic and the heavy mass band is parabolic. Band parameters of the model were determined. The theory was based on Cohen's dispersion law for energy surfaces with rotation plus reflection symmetry. The close similarity in band structure between SnTe and PbTe was established. It appeared that the 300°K band parameters of SnTe were very similar to the 0°K band parameters of PbTe, given by Rogers, but the energy separation between valence band edges was much greater in SnTe. Intravalley acoustic-mode lattice scattering was always dominant at room temperature.