Optical gain and absorption of 1.55 μm InAs quantum dash lasers on silicon substrate
Optical gain and absorption of 1.55 μm InAs quantum dash lasers on silicon substrate
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硅衬底上 1.55 μm InAs 量子冲激激光器的光学增益和吸收
DOI：
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发表时间：
2021
影响因子：
4
通讯作者：
P. Smowton
中科院分区：
文献类型：
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作者：
Zhibo Li;S. Shutts;Ying Xue;W. Luo;K. Lau;P. Smowton
这封信报告了直接生长在 (001) Si 衬底上的 InAs/InGaAs 量子冲刺激光器的与温度相关的光学增益和吸收特性，包括量子限制斯塔克效应，激光波长在 1.5–1.6μm 范围内。 20°C 时，最大光净增益为 22 cm−1，内部光损耗为 ∼17 cm−1。作为注入水平函数的测量表明，虽然所需的电流密度仍然很高，但其内在性能明显优于在 1.3μm 下运行的类似操作的 InAs 量子点，并且可以进一步努力生长以减少内部光学损耗和非辐射电流密度。测量光学模态吸收光谱作为从 0V 到 6V 的反向偏压的函数，并且由于量子限制斯塔克效应而在吸收边观察到 40nm 红移，这表明这些材料在硅上生长的电吸收调制器中的潜在应用。
This Letter reports on the temperature-dependent optical gain and absorption features, including the quantum confined Stark effect, of an InAs/InGaAs quantum-dash laser directly grown on a (001) Si substrate, with the lasing wavelength within the range of 1.5–1.6 μm. The maximum optical net gain was 22 cm−1, and the internal optical loss was ∼–17 cm−1 at 20 °C. Measurements as a function of injection level indicate that while the required current densities are still high, the intrinsic performance is significantly better than that of similarly operated InAs quantum dots operating at 1.3 μm, and further effort on growth could be made to reduce the internal optical losses and non-radiative current density. Optical modal absorption spectra were measured as a function of reverse bias from 0 V to 6 V, and a 40 nm redshift was observed in the absorption edge due to the quantum confined Stark effect, suggesting potential applications of these materials in electro-absorption modulators grown on silicon.