Nanosecond excitonic spin relaxation in cubic GaN
Nanosecond excitonic spin relaxation in cubic GaN
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DOI：
10.1063/1.2730396
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发表时间：
2006-04
期刊：
影响因子：
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通讯作者：
A. Tackeuchi;H. Otake;Yusuke Ogawa;T. Ushiyama;T. Fujita;F. Takano;H. Akinaga
中科院分区：
文献类型：
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作者：
A. Tackeuchi;H. Otake;Yusuke Ogawa;T. Ushiyama;T. Fujita;F. Takano;H. Akinaga
立方GaN中的激子自旋弛豫是通过具有亚皮秒时间分辨率的自旋相关的泵浦和探测反射测量来观察的。在15 - 75 K的自旋弛豫时间被发现是长于5纳秒和皮秒级的短自旋弛豫时间不存在。虽然这些长的自旋弛豫时间与六方GaN中A带自由激子的亚皮秒自旋弛豫形成鲜明对比，但它们与自旋弛豫时间变得更长的依赖性一致。
The excitonic spin relaxation in cubic GaN is observed by spin‐dependent pump and probe reflectance measurements with sub‐picosecond time resolution. The spin relaxation times at 15 – 75 K are found to be longer than 5 ns and short spin relaxation times on the picosecond order are not present. Although these long spin relaxation times are in striking contrast to the sub‐picosecond spin relaxation of A‐band free excitons in hexagonal GaN, they are consistent with the dependence that spin relaxation time becomes longer for wider‐band‐gap zincblende semiconductors.