Catalytic CVD growth of Si-C and Si-C-O alloy films by using alkylsilane and related compounds
Catalytic CVD growth of Si-C and Si-C-O alloy films by using alkylsilane and related compounds
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DOI：
10.1016/s0040-6090(03)00078-6
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发表时间：
2003-04-22
期刊：
影响因子：
2.1
通讯作者：
Machida, H
中科院分区：
文献类型：
--
作者：
Nakayama, H;Takatsuji, K;Machida, H
Cat-CVD法已应用于Si-C和Si-C—O合金薄膜的生长。研究了其生长机理，重点讨论了长丝材料对其生长的影响。在1300 ~ 2000℃的温度范围内，测定了W、Ta、Mo和Pt长丝的生长速率和合金成分。用单分子源Si(CH3)(2)H-2（二甲基硅烷）可以生长出x在0.38 ~ 0.7范围内的Si1-xCx薄膜。采用Si(OC2H5)(4)（四乙氧基硅烷）和Si(CH3)(2)(OCH3)(2)（二甲基二甲氧基硅烷）分子成功制备了Si- c - o三元合金薄膜。(C) 2003 Elsevier Science B.V.版权所有
Cat-CVD method has been applied to the growth of Si-C and Si-C--O alloy thin films. Growth mechanism has been studied with emphasis on the effects of filament materials. Growth rates and alloy compositions were measured for W, Ta, Mo and Pt filaments at the filament temperatures ranging from 1300 to 2000 degreesC. Si1-xCx films with x ranging from 0.38 to 0.7 could be grown by using single molecule source Si(CH3)(2)H-2 (dimethylsilane). Si-C-O ternary alloy films was successfully prepared by using Si(OC2H5)(4) (tetraethoxysilane) and Si(CH3)(2)(OCH3)(2) (dimethyldimethoxysilane) molecules. (C) 2003 Elsevier Science B.V. All rights reserved.