Oxide‐Substrate and Oxide‐Oxide Chemical Reactions in Thermally Annealed Anodic Films on GaSb , GaAs , and GaP
Oxide‐Substrate and Oxide‐Oxide Chemical Reactions in Thermally Annealed Anodic Films on GaSb , GaAs , and GaP
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DOI：
10.1149/1.2129502
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发表时间：
1980-11
影响因子：
3.9
通讯作者：
G. Schwartz;G. Gualtieri;J. E. Griffiths;C. D. Thurmond;B. Schwartz
中科院分区：
文献类型：
--
作者：
G. Schwartz;G. Gualtieri;J. E. Griffiths;C. D. Thurmond;B. Schwartz
利用拉曼散射和三元相图，在热退火的GaSb和GaAs阳极膜中确定了氧化物-衬底反应的基本模式。在GaAs和GaSb上的相应反应通过As_（20）_3-t~（-2）GaAs_（-+）Ga~（3+）4As和Sb_（20）_8 + 2GaSb_（--）Ga_（20）_3 + 4Sb产生As和Sb的界面沉积。未能观察到元素P生成退火阳极膜上的GaP结合估计的Ga-PO相图表明，氧化物-氧化物反应发生在膜中，而不是。正磷酸盐或偏磷酸盐的形成取决于薄膜中Ga 2 O/P 2 O 5的比例，即P 2 O 5-q-Ga 2 O 3--> 2 GaPO 4和3 P 2 O 5-t-Ga 2 O--> 2 Ga（PO 3）-。III-V族化合物在半导体工业中的当前和未来应用再次强调需要对氧化物-半导体界面处发生的化学和物理现象有更明确的理解。影响在这样的界面处的化学反应的引发和传播的因素、所形成的产物的性质和空间分布以及它们对这样的结构的电子性质的影响的特征不充分。此外，鲜为人知的是，这些接口的长期稳定性，这些过程的影响。特别令人感兴趣的是在氧化物-半导体界面区域中存在或不存在半导体的元素成分，主要是因为通常假设它们的存在可能对III-V固态器件的电子性质具有有害影响。在目前的工作中，阳极氧化膜，电化学生长在水溶液中，在室温下的GaAs，GaSb，和GaP的反射拉曼散射检查的证据元素的沉积物的As，Sb，或P在阳极氧化状态和证据的界面氧化物/基板反应引起的热退火。根据二元相稳定性实验、热力学计算和拉曼散射，对Ga-As-O、Ga-Sb-O和Ga-PO体系的三元相图进行了估算。所得相图表明，可以存在于热力学平衡的界面化学成分，
A fundamental pattern of oxide-substrate reactions has been identified in thermally annealed anodic films on GaSb and GaAs through the use of l~ aman scattering and ternary phase diagrams. The relevant reactions on GaAs and GaSb yield interfacial deposits of As and Sb via As203-t-2GaAs-+ Ga~ O3+ 4As and Sb208+ 2GaSb--* Ga203+ 4Sb. The failure to observe elemental P generation in annealed anodic films on GaP in conjunction with an estimate of the Ga-PO phase diagram suggests that oxide-oxide reactions occur in the film instead. Formation of either ortho or metaphosphate will depend on the Ga2OJP205 ratio in the film according to P205 q-Ga2Oa--> 2GaPO4 and 3P205-t-Ga20~--> 2Ga (PO3)~.The current and future utilization of III-V compounds in the semiconductor industry reemphasizes the need for a more definitive understanding of the chemical and physical phenomena that occur at oxidesemiconductor interfaces. The factors affecting the initiation and propagation of chemical reactions at such interfaces, the nature and spatial distribution of the products formed, and their effect on the electronic properties of such structures are inadequately characterized. Moreover, little is known about the effects of such processes on the long term stability of these interfaces. Of special interest is the presence or absence of elemental constituents of the semiconductor in the oxide-semiconductor interfacial region, largely because it has often been assumed that their presence may have a deleterious effect on the electronic properties of III-V solid-state devices. In the present work, anodic oxide films that were electrochemically grown in aqueous solutions at room temperature on GaAs, GaSb, and GaP were examined by reflection Raman scattering for evidence of elementaI deposits of As, Sb, or P in the as-anodized state and for evidence of interfaciaI oxide/substrate reactions induced by thermal annealing. Estimates of the ternary phase diagrams for the Ga-As-O, Ga-Sb-O, and Ga-PO systems were derived from binary phase stability experiments, thermodynamic calculations, and Raman scattering. The resulting phase diagrams indicate that the interfacial chemical constituents which can exist in thermodynamic equilib-