Resist patterning and x-ray mask fabrication employing focused ion beam exposure and subsequent dry etching
Resist patterning and x-ray mask fabrication employing focused ion beam exposure and subsequent dry etching
复制标题
采用聚焦离子束曝光和随后的干法蚀刻进行抗蚀剂图案化和 X 射线掩模制造
DOI：
10.1116/1.582993
复制
发表时间：
1985
影响因子：
1.4
通讯作者：
A. Ozawa
中科院分区：
文献类型：
--
作者：
H. Kuwano;H. Takaoka;A. Ozawa
一种光刻方法，使用聚焦离子束曝光和随后的干蚀刻检查。并对光刻机理进行了探讨。采用通过该方法形成的抗蚀剂图案，制备X射线掩模。结果表明，聚合物抗蚀剂的Ga离子暴露区域在未暴露区域的O2反应离子蚀刻干显影过程中充当原位掩模。通过XPS测量曝光或显影后抗蚀剂中的镓分布及其化学位移。暴露于氧等离子体的抗蚀剂的表面镓原子被改变为Ga2O3，其覆盖抗蚀剂表面并充当对抗氧等离子体的原位掩模。通过制备亚微米图案X射线掩模证明了光刻方法的可行性。
A lithographic method using focused ion beam exposure and subsequent dry etching is examined. The lithographic mechanism is also investigated. Employing resist patterns formed by this method, an x‐ray mask is prepared. It is shown that Ga ion exposed regions of polymer resists act as an in situ mask during the O2 reactive ion etching dry development of unexposed regions. Gallium distribution and its chemical shift in a resist after exposure or development are measured by XPS. The surface gallium atoms of resist exposed to oxygen plasma are changed to Ga2O3, which covers the resist surface and acts as in situ masks against the oxygen plasma. The feasibility of the lithographic method is demonstrated by a preparation of submicron pattern x‐ray masks.