Maximum usable thickness revisited: Imaging dislocations in Si by modern high-voltage scanning transmission electron microscopy
Maximum usable thickness revisited: Imaging dislocations in Si by modern high-voltage scanning transmission electron microscopy
复制标题
DOI：
10.7567/jjap.56.100304
复制
发表时间：
2017-09
影响因子：
1.5
通讯作者：
Kazuhisa Sato;Yuki Yamashita;H. Yasuda;H. Mori
中科院分区：
文献类型：
--
作者：
Kazuhisa Sato;Yuki Yamashita;H. Yasuda;H. Mori
我们使用楔形Si（110）单晶，包括人工引入的高密度位错，在扫描透射电子显微镜（STEM）下定量评估了样品的可用厚度。采用位错图像的宽度作为定量评价可用厚度的标准。发现STEM的可用厚度优于TEM；所得结果STEM为14.7µm， TEM为5.8µm。特别是，在STEM中，位错可以观察到宽度为10 - 15 nm的细线，厚度范围可达10 μ m。最新的高压STEM可用于成像厚半导体中的晶体缺陷。
We have quantitatively evaluated the usable thickness of specimens in scanning transmission electron microscopy (STEM) at 1 MV using a wedge-shaped Si(110) single crystal including artificially introduced high-density dislocations. The width of dislocation images was employed as a criterion for the quantitative evaluation of usable thickness. Superior usable thickness in STEM than in TEM was found; the obtained results were 14.7 µm for STEM and 5.8 µm for TEM. In particular, in STEM, dislocations can be observed as thin lines with 10–15 nm width in the thickness range up to 10 µm. The latest high-voltage STEM is useful for imaging crystal defects in thick semiconductors.