Nontrivial surface state transport in Bi2Se3 topological insulator nanoribbons
Nontrivial surface state transport in Bi2Se3 topological insulator nanoribbons
复制标题
Bi2Se3 拓扑绝缘体纳米带中的非平凡表面态传输
DOI：
10.1063/1.4975386
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发表时间：
2017-01-30
影响因子：
4
通讯作者：
Zhang, Rong
中科院分区：
文献类型：
--
作者：
Pan, Haiyang;Zhang, Kang;Zhang, Rong
拓扑绝缘体纳米结构具有比体材料更大的表面积体积比，这增强了表面态对电输运的贡献。在这里，我们报告的单晶Bi 2Se 3窄纳米带的化学气相沉积法合成。在平行磁场中观察到表面态诱导的Aharonov-Bohm效应。一维局域化理论可以很好地拟合不同温度下的弱反局域化（WAL），拟合的相干长度大于纳米尺度的截面尺寸。减去体背景后的WAL振幅仅取决于不同角度的磁场垂直分量，揭示了WAL的表面性质。所有这些签名表明我们的Bi 2Se 3窄纳米带中的非平凡的表面态输运。
Topological insulator nanostructures have the larger surface-to-volume ratios than the bulk materials, which enhances the surface state contribution to the electrical transport. Here, we report on the single-crystalline Bi2Se3 narrow nanoribbons synthesized by the chemical vapor deposition method. The surface state induced Aharonov-Bohm effect was observed in the parallel magnetic field. The weak antilocalization (WAL) at various temperatures can be well fitted by the 1D localization theory, and the fitting coherence length is larger than the cross section size of the nanoribbon. The amplitude of WAL after subtracting the bulk background is only dependent on the vertical component of the magnetic field at various angles, revealing the surface nature of WAL. All these signatures indicate the nontrivial surface state transport in our Bi2Se3 narrow nanoribbons.