GaInAs/(Al)GaAs quantum-dot lasers with high wavelength stability
GaInAs/(Al)GaAs quantum-dot lasers with high wavelength stability
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具有高波长稳定性的 GaInAs/(Al)GaAs 量子点激光器
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
I. Esquivias
中科院分区：
文献类型：
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作者：
E. Pavelescu;C. Gilfert;J. Reithmaier;A. Martín;I. Esquivias
研制了920 nm InGaAs/（Al）GaAs高功率量子点激光器材料，点尺寸、点密度和尺寸分布，以及适当的激光器设计，以允许通过定制的光谱增益分布对发射波长进行内部温度补偿。该激光器结构由固体源分子束外延生长，并包括在一个单独的限制异质结构设计与一个大的光学腔。由于总腔损耗依赖于腔长，工作点发生了偏移，并且对于2.6 mm的腔长达到了0.081 nm K − 1的非常低的温度系数。
A 920 nm InGaAs/(Al)GaAs high-power quantum-dot laser material was developed with optimized geometric parameters, i.e., dot size, dot density and size distribution, and an appropriate laser design to allow an internal temperature compensation of the emission wavelength by a tailored spectral gain profile. The laser structure was grown by solid source molecular-beam epitaxy and consisted in a separate confinement heterostructure design with a large optical cavity. Due to the cavity length dependence of the total cavity losses, the operation point is shifted and reached a very low temperature coefficient of 0.081 nm K−1 for a cavity length of 2.6 mm.