Giant Hall effect in percolating ferromagnetic granular metal‐insulator films
Giant Hall effect in percolating ferromagnetic granular metal‐insulator films
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DOI：
10.1063/1.115259
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发表时间：
1995-12
影响因子：
4
通讯作者：
A. Pakhomov;X. Yan;B. Zhao
中科院分区：
文献类型：
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作者：
A. Pakhomov;X. Yan;B. Zhao
研究了金属体积分数x在0.5-1.0范围内共溅射颗粒状Ni-SiO2薄膜的电阻率和霍尔电阻率。接近金属-绝缘体转变，或x约为0.53-0.61，霍尔电阻率的饱和值高达2×10−4 Ω cm。该值几乎比纯镍大4个数量级。在5-300 K范围内，电阻率和霍耳电阻率随温度变化很小。我们认为，磁性颗粒金属薄膜可以作为高灵敏度霍尔传感器的替代候选材料。
We studied both the resistivity and the Hall resistivity of cosputtered granular Ni–SiO2 films with the metal volume fraction x in the range of 0.5–1.0. Near the metal‐insulator transition, or x of about 0.53–0.61, the saturated value of the Hall resistivity was up to 2×10−4 Ω cm. This value is almost 4 orders of magnitude greater than that of pure nickel. Both the resistivity and the Hall resistivity varied weakly with temperature, throughout the range of 5–300 K. We suggest that the percolating ferromagnetic granular metal films can be an alternative candidate material for high sensitivity Hall sensors.