Dynamic Interface Formation in Magnetic Thin Film Heterostructures
Dynamic Interface Formation in Magnetic Thin Film Heterostructures
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DOI：
10.1002/adfm.201804594
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发表时间：
2018-06
影响因子：
19
通讯作者：
S. Nakashima;T. Miyamachi;Y. Tatetsu;Yukio Takahashi;Y. Takagi;Y. Gohda;T. Yokoyama;F. Komori
中科院分区：
文献类型：
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作者：
S. Nakashima;T. Miyamachi;Y. Tatetsu;Yukio Takahashi;Y. Takagi;Y. Gohda;T. Yokoyama;F. Komori
磁性薄膜异质结构的广泛研究，主要是研究与异质界面形成有关的新现象，并具有广阔的应用前景。结合X射线磁圆二色性和扫描隧道显微镜，研究了在Cu（001）上生长的Fe薄膜（Mn/Fe薄膜异质结构）的电子和磁性能的界面因子随Mn包覆层的数量而动态变化。铁层的元素磁化曲线通过增加Mn的覆盖率呈现出从面外到面内的两步自旋重定向转变。结合第一性原理计算，原子尺度的结构和电子特性表征成功地揭示了纠缠界面因素的作用，并阐明了跃迁的驱动力。在低锰覆盖下，相变的第一步主要是由异质界面处形成的FeMn有序合金引起的；在高锰覆盖下，相变的第二步主要是由与界面处的FeMn有序合金的电子杂化引起的。
Magnetic thin film heterostructures have been widely studied for fundamental interests in the emergence of novel phenomena associated with the heterointerface formation as well as their promising practical potential. Combining X‐ray magnetic circular dichroism with scanning tunneling microscopy, it is shown for fcc Fe thin films grown on Cu(001) with Mn overlayers (Mn/Fe thin film heterostructures) that the interfacial factors dominating the electronic and magnetic properties of the entire system dynamically change with the amount of the Mn overlayer. Element specific magnetization curves of the Fe layer exhibit a two‐step spin reorientation transition from out‐of‐plane to in‐plane direction by increasing the Mn coverage. The atomic‐scale characterizations of structural and electronic properties in combination with the first‐principles calculations successfully unravel the roles of the entangled interfacial factors and clarify the driving forces of the transition. The first step of the transition at a low Mn coverage is dominantly induced by the formation of FeMn disordered alloy at the heterointerface, and the electronic hybridization with the interfacial FeMn ordered alloy is dominant as the origin of the second step of the transition at a high Mn coverage.