Fluorinated amorphous carbon films for low permittivity interlevel dielectrics
Fluorinated amorphous carbon films for low permittivity interlevel dielectrics
复制标题
DOI：
10.1116/1.591102
复制
发表时间：
1999-12
影响因子：
1.4
通讯作者：
J. Theil
中科院分区：
文献类型：
--
作者：
J. Theil
用低介电常数（κ）材料替代SiO2的需求随着每一代互补金属氧化物半导体工艺的产生而增加，因为互连RC延迟、串扰和功率耗散在高性能集成电路中发挥越来越大的作用。通过等离子体辅助化学气相沉积（CVD）技术沉积的具有低κ特性（κ = 2.0-2.4）的氟化非晶碳膜（a-C：F，H）提供了若干优点，包括低温处理、良好的间隙填充能力、最小的水分吸收和简单的实现。已经研究了几种沉积技术，包括高密度等离子体和平行板等离子体辅助CVD。在每种情况下，都有可能沉积具有广泛变化的性质（例如κ和热稳定性）的存款a-C：F，H膜。这导致了大量的混乱，什么是需要产生有用的材料。来自许多不同来源的结果进行检查，以制定一个连贯的图片之间的关系存款…
The need to substitute SiO2 with low dielectric constant (κ) materials increases with each complementary metal–oxide–semiconductor process generation as interconnect RC delay, crosstalk, and power dissipation play an ever larger role in high-performance integrated circuits. Fluorinated amorphous carbon films (a-C:F,H) with low-κ properties (κ∼2.0–2.4) deposited by plasma-assisted chemical vapor deposition (CVD) techniques provide several advantages including low temperature processing, good gap fill capabilities, minimal moisture absorption, and simple implementation. Several deposition techniques have been examined, including high-density plasma and parallel-plate plasma-assisted CVD. In each case, it is possible to deposit a-C:F,H films with widely varying properties, such as κ and thermal stability. This has led to a good deal of confusion as to what is required to produce useful material. Results from many different sources are examined to develop a coherent picture of the relationships between deposi...