Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors
Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors
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使用极端介电常数材料实现超宽带隙半导体晶体管的静电工程
DOI：
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发表时间：
2020
影响因子：
3.1
通讯作者：
S. Rajan
中科院分区：
文献类型：
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作者：
N. Kalarickal;Zixuan Feng;A. F. M. Anhar Uddin Bhuiyan;Zhanbo Xia;Wyatt Moore;Joe F. Mcglone;A. Arehart;S. Ringel;Hongping Zhao;S. Rajan
The performance of ultra-wide bandgap semiconductors like <inline-formula> <tex-math notation="LaTeX">${eta }$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> is critically dependent on achieving high average electric fields within the active region of the device. In this article, we show that dielectrics like BaTiO<sub>3</sub> with extremely high dielectric constant can provide an efficient field management strategy by improving the uniformity of electric field profile within the gate–drain region of lateral field-effect transistors. Using this strategy, we achieved high average breakdown field of 1.5 and 4 MV/cm at gate–drain spacing (<inline-formula> <tex-math notation="LaTeX">${L}_{ ext {gd}}$ </tex-math></inline-formula>) of 6 and <inline-formula> <tex-math notation="LaTeX">$0.5~{mu } ext{m}$ </tex-math></inline-formula>, respectively in <inline-formula> <tex-math notation="LaTeX">${eta }$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub>, at a high channel sheet charge density of <inline-formula> <tex-math notation="LaTeX">$1.6,,{ imes },,10^{{13}}$ </tex-math></inline-formula> cm<sup>−2</sup>. The high channel charge density along with the high breakdown field enabled a record power figure of merit (<inline-formula> <tex-math notation="LaTeX">${V}_{ ext {br}}^{{2}}/{R}_{ ext {ON}}$ </tex-math></inline-formula>) of 376 MW/cm<sup>2</sup> at a gate–drain spacing of <inline-formula> <tex-math notation="LaTeX">${3}~{mu } ext{m}$ </tex-math></inline-formula>.
The performance of ultra-wide bandgap semiconductors like <inline-formula> <tex-math notation="LaTeX">${eta }$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> is critically dependent on achieving high average electric fields within the active region of the device. In this article, we show that dielectrics like BaTiO<sub>3</sub> with extremely high dielectric constant can provide an efficient field management strategy by improving the uniformity of electric field profile within the gate–drain region of lateral field-effect transistors. Using this strategy, we achieved high average breakdown field of 1.5 and 4 MV/cm at gate–drain spacing (<inline-formula> <tex-math notation="LaTeX">${L}_{ ext {gd}}$ </tex-math></inline-formula>) of 6 and <inline-formula> <tex-math notation="LaTeX">$0.5~{mu } ext{m}$ </tex-math></inline-formula>, respectively in <inline-formula> <tex-math notation="LaTeX">${eta }$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub>, at a high channel sheet charge density of <inline-formula> <tex-math notation="LaTeX">$1.6,,{ imes },,10^{{13}}$ </tex-math></inline-formula> cm<sup>−2</sup>. The high channel charge density along with the high breakdown field enabled a record power figure of merit (<inline-formula> <tex-math notation="LaTeX">${V}_{ ext {br}}^{{2}}/{R}_{ ext {ON}}$ </tex-math></inline-formula>) of 376 MW/cm<sup>2</sup> at a gate–drain spacing of <inline-formula> <tex-math notation="LaTeX">${3}~{mu } ext{m}$ </tex-math></inline-formula>.