Impact of random discrete dopant in extension induced fluctuation in gate–source/drain underlap FinFET
Impact of random discrete dopant in extension induced fluctuation in gate–source/drain underlap FinFET
复制标题
随机离散掺杂剂对栅极-源极/漏极重叠 FinFET 延伸引起的波动的影响
DOI：
--
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Jinfeng Kang
中科院分区：
文献类型：
--
作者：
Yijiao Wang;Peng Huang;Z. Xin;L. Zeng;Xiaoyan Liu;G. Du;Jinfeng Kang
采用三维工艺计算机辅助设计（TCAD）模拟研究了随机离散掺杂（RDD）对14 nm SOI栅-源/漏（G-S/D）underlap鳍式场效应晶体管（FinFET）外延引起的涨落的影响。为了全面了解RDD在扩展中的影响，分别在渠道和扩展中以及在一起评估RDD效果。分析了阈值电压（Vth）、亚阈值斜率（SS）、漏致势垒降低（DIBL）、驱动电流（Ion）和漏电流（Ioff）等FinFET性能参数的统计变异性。研究结果表明，RDD在扩展过程中会导致显著的变化，尤其是SS、DIBL和Ion，因此要准确估计RDF，必须将RDD与通道中的RDD结合起来考虑。同时，从整体可变性控制的角度出发，建议提高外延区的掺杂浓度。
In this work, three dimensional technology computer-aided design (TCAD) simulations are performed to investigate the impact of random discrete dopant (RDD) including extension induced fluctuation in 14 nm silicon-on-insulator (SOI) gate–source/drain (G–S/D) underlap fin field effect transistor (FinFET). To fully understand the RDD impact in extension, RDD effect is evaluated in channel and extension separately and together. The statistical variability of FinFET performance parameters including threshold voltage (Vth), subthreshold slope (SS), drain induced barrier lowering (DIBL), drive current (Ion), and leakage current (Ioff) are analyzed. The results indicate that RDD in extension can lead to substantial variability, especially for SS, DIBL, and Ion and should be taken into account together with that in channel to get an accurate estimation on RDF. Meanwhile, higher doping concentration of extension region is suggested from the perspective of overall variability control.