LARGE LOW-TEMPERATURE HALL-EFFECT AND RESISTIVITY IN MIXED-VALENT SMB6
LARGE LOW-TEMPERATURE HALL-EFFECT AND RESISTIVITY IN MIXED-VALENT SMB6
复制标题
DOI：
10.1103/physrevb.20.4807
复制
发表时间：
1979-01-01
影响因子：
3.7
通讯作者：
WACHTER, P
中科院分区：
文献类型：
--
作者：
ALLEN, JW;BATLOGG, B;WACHTER, P
测量了Sm-B6小晶体的霍尔系数RH在2-300K之间，其中4K的电阻率ρ比300K的值290μΩcm大近104倍。对于低温电阻率上升小得多的样品，发现了与以前报道的结果显著不同。结果表明，电阻率增加的大小不能归因于金属载流子数目的散射机制，而RH的大小意味着在4K时空穴数和电子数小于∼5×10 17/cm3。
The Hall coefficient R H has been measured between 2 and 300 K for small crystals of Sm B 6 in which the resistivity ρ at 4 K is nearly 10 4 times greater than its 300-K value of 290 μΩ cm. Significant differences from previous results reported for samples with a much smaller low-temperature resistivity rise have been found. It is shown that the size of the resistivity increase precludes its being ascribed to a scattering mechanism for a metallic number of carriers, and that the size of R H implies numbers of holes and electrons less than∼ 5× 10 17/cm 3 at 4 K. The origin of the low-temperature residual conductivity is discussed.