Time‐resolved luminescence measurements on GaAs homostructures using pulse excitation of a scanning tunneling microscope
Time‐resolved luminescence measurements on GaAs homostructures using pulse excitation of a scanning tunneling microscope
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使用扫描隧道显微镜的脉冲激发对 GaAs 同质结构进行时间分辨发光测量
DOI：
10.1116/1.588370
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
H. Hartnagel
中科院分区：
文献类型：
--
作者：
M. Stehle;M. Bischoff;H. Pagnia;J. Horn;N. Marx;B. Weiss;H. Hartnagel
我们报告了首次使用扫描隧道显微镜的隧道电流进行时间分辨发光测量，以其高空间分辨率进行激发。这项新技术使我们能够测量专门定制的 n+-n-i-n+-GaAs 同质结构的少数载流子寿命和本征区域的掺杂浓度。此外，我们表明，正如预期的那样，少数载流子寿命强烈依赖于表面复合，这表明该技术可用于确定局部表面态密度。
We report the first time‐resolved luminescence measurements using the tunneling current of a scanning tunneling microscope for excitation with its high spatial resolution. This new technique enabled us to measure the minority‐carrier lifetime and the doping concentration in the intrinsic region of a specially tailored n+‐n‐i‐n+‐GaAs homostructure. Further, we show that the minority‐carrier lifetime depends, as expected, strongly on surface recombination which demonstrates that this technique may be used to determine the local surface state density.