An N-ethylated barbituric acid end-capped bithiophene as an electron-acceptor material in fullerene-free organic photovoltaics.

An N-ethylated barbituric acid end-capped bithiophene as an electron-acceptor material in fullerene-free organic photovoltaics.
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DOI:
10.1039/c5cc00564g
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发表时间:
2015-03
影响因子:
4.9
通讯作者:
P. Sullivan;G. Collis;L. Rochford;J. F. Arantes;Peter Kemppinen;T. Jones;K. Winzenberg
P. Sullivan;G. Collis;L. Rochford;J. F. Arantes;Peter Kemppinen;T. Jones;K. Winzenberg
中科院分区:
化学2区
文献类型:
--
作者:
P. Sullivan;G. Collis;L. Rochford;J. F. Arantes;Peter Kemppinen;T. Jones;K. Winzenberg

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一种基于N-乙基巴比妥酸联噻吩(EBB)的新型有机光伏可蒸发电子受体材料已被证明。使用这种非富勒烯受体和氯化亚酞菁 (SubPc) 供体制造的双层器件可产生高达 2.6% 的功率转换效率以及接近 1.4 V 的极高开路电压。
A new evaporable electron acceptor material for organic photovoltaics based on N-ethyl barbituric acid bithiophene (EBB) has been demonstrated. Bilayer devices fabricated with this non-fullerene acceptor and boron subphthalocyanine chloride (SubPc) donor produce power conversion efficiencies as high as 2.6% with an extremely large open-circuit voltage approaching 1.4 V.