Excitation mechanisms of individual Cd Te ∕ Zn Te quantum dots studied by photon correlation spectroscopy
Excitation mechanisms of individual Cd Te ∕ Zn Te quantum dots studied by photon correlation spectroscopy
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光子相关光谱研究单个 Cd Te ∕ Zn Te 量子点的激发机制
DOI：
10.1103/physrevb.74.085319
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发表时间：
2006
影响因子：
3.7
通讯作者：
G. Karczewski
中科院分区：
文献类型：
--
作者：
J. Suffczyński;T. Kazimierczuk;M. Goryca;B. Piechal;A. Trajnerowicz;K. Kowalik;P. Kossacki;A. Golnik;K. Korona;M. Nawrocki;J. Gaj;G. Karczewski
系统测量的自相关和交叉相关的光子发射的单个$\mathrm{Cd}\mathrm{Te}闪烁\mathrm{Zn}\mathrm{Te}$量子点脉冲激发下，用于阐明非共振激发机制，在这个自组装系统。记忆效应延伸到几个激发脉冲已被检测到与以前的报告一致，定量描述的速率方程模型，拟合一套完整的相关性和PL强度的结果。确立了单载流子俘获在量子点中的重要作用。一个解释是建议在连续波激发下的量子点上的$X\text{\ensuremath{-}}X$自相关实验中观察到的异常宽的反聚束凹陷。
Systematic measurements of auto- and cross-correlations of photons emitted from individual $\mathrm{Cd}\mathrm{Te}∕\mathrm{Zn}\mathrm{Te}$ quantum dots under pulsed excitation were used to elucidate nonresonant excitation mechanisms in this self-assembled system. Memory effects extending over a few excitation pulses have been detected in agreement with previous reports and quantitatively described by a rate equation model, fitting a complete set of correlation and PL intensity results. The important role of single carrier trapping in the quantum dot was established. An explanation was suggested for the unusually wide antibunching dip observed previously in $X\text{\ensuremath{-}}X$ autocorrelation experiments on quantum dots under cw excitation.