Determination of the dielectric biaxiality in a chiral smectic-C phase.

Determination of the dielectric biaxiality in a chiral smectic-C phase.
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手性近晶 C 相介电双轴性的测定。

DOI:
10.1103/physreva.46.951
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发表时间:
1992
期刊:
Physical review. A, Atomic, molecular, and optical physics
影响因子:
--
通讯作者:
K. Skarp
K. Skarp
中科院分区:
--
文献类型:
--
作者:
F. Gouda;W. Kuczyński;S. Lagerwall;M. Matuszczyk;T. Matuszczyk;K. Skarp

文献摘要

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提出了一种方法,允许在材料具有未补偿螺旋的情况下确定手性近晶-C 液晶的介电张量的三个主要值(ε 1 ,ε 2 ,ε 3 )。因此,它基本上适用于所有单一物质,因此适合开发近晶碳材料的分子结构和介电性能之间的相关性。该方法需要两个样品并使用三种不同的测量几何形状
A method is presented allowing the determination of the three principal values (∈ 1 ,∈ 2 ,∈ 3 ) of the dielectric tensor for a chiral smectic-C liquid crystal in the case that the material has an uncompensated helix. Hence it is applicable for essentially all single substances and therefore suitable for developing correlations between molecular structure and dielectric properties of the smectic-C, materials. The method requires two samples and uses three different measurement geometries