Correlation of BTI induced device parameter degradation and variation in scaled Metal Gate / High-k CMOS technologies
Correlation of BTI induced device parameter degradation and variation in scaled Metal Gate / High-k CMOS technologies
复制标题
BTI 引起的器件参数退化与按比例缩放的金属栅/高 k CMOS 技术变化的相关性
DOI：
10.1109/irps.2014.6861102
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
T. Nigam
中科院分区：
文献类型：
--
作者：
A. Kerber;T. Nigam
详细研究了零时器件参数与BTI引起的参数退化之间的关系。对于超窄逻辑门，器件过驱动仍然是ΔI<SUB>DSAT</SUB>的主导因素，而ΔV<SUB>TLIN</SUB>显示出与时间零值的微弱但可测量的相关性。该相关性对受压力器件的V<SUB>TLIN</SUB>的σ值有影响，并且应该被考虑用于更准确的电路老化模拟。
The correlation between time-zero device parameter and BTI induced parameter degradation is studied in detail. The device overdrive remains the dominant factor in the ΔI<sub>dsat</sub> for ultra-narrow logic gates while ΔV<sub>Tlin</sub> shows a weak but measurable correlation to the time-zero value. The correlation has an impact on the σ-values of V<sub>Tlin</sub> for stressed devices and should be considered for more accurate circuit aging simulations.