Trapping of injection charges in emission centers of GaN:Eu red LED characterized with 1/f noise involved in forward current
Trapping of injection charges in emission centers of GaN:Eu red LED characterized with 1/f noise involved in forward current
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DOI：
10.7567/jjap.55.015801
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发表时间：
2015
影响因子：
1.5
通讯作者：
M. Ishii;A. Koizumi;Y. Fujiwara
中科院分区：
文献类型：
--
作者：
M. Ishii;A. Koizumi;Y. Fujiwara
对最近研制的掺Eu GaN（GaN：Eu）红光LED的正向电流进行了噪声分析，以确定其限幅过程。虽然传统的InGaN蓝色和AlGaInP琥珀色LED的噪声功率谱遵循泊松分布，GaN：Eu红色LED的噪声功率谱指示1/f噪声。代表电子-空穴（e-h）复合的泊松分布与常规LED的发光过程一致。另一方面，1/f噪声揭示了GaN：Eu LED的速率限制过程是注入电荷的捕获，而不是随后的e-h复合来激发Eu。通过对1/f噪声的详细分析，发现了几个具有不同捕获时间常数（> 3.5ns）的发射中心。这些结果证明了噪声分析对表征新LED中的电荷动力学的适用性。
Noise analysis of the forward current of LEDs was performed to identify the rate-limiting process of a recently developed Eu-doped GaN (GaN:Eu) red LED. Although the noise power spectrum of conventional InGaN blue and AlGaInP amber LEDs followed Poisson distributions, that of the GaN:Eu red LED indicated a 1/f noise. The Poisson distribution that represents electron–hole (e–h) recombination was consistent with the light emitting process of the conventional LED. On the other hand, the 1/f noise revealed that the rate-limiting process of the GaN:Eu LED was trapping of injection charges rather than following e–h recombination to excite Eu. From the detailed analysis of the 1/f noise, several emission centers with different trapping time constants (>3.5 ns) were discovered. These results demonstrated the applicability of the noise analysis to characterization of charge dynamics in the new LEDs.