Characterization of La2 O 3 and Yb2 O 3 Thin Films for High-k Gate Insulator Application
Characterization of La2 O 3 and Yb2 O 3 Thin Films for High-k Gate Insulator Application
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DOI：
10.1149/1.1581278
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发表时间：
2003-07
影响因子：
3.9
通讯作者：
S. Ohmi;C. Kobayashi;I. Kashiwagi;C. Ohshima;H. Ishiwara;H. Iwai
中科院分区：
文献类型：
--
作者：
S. Ohmi;C. Kobayashi;I. Kashiwagi;C. Ohshima;H. Ishiwara;H. Iwai
Rare earth oxides, such as La 2 O 3 and Yb 2 O 3 , deposited on Si(100) were investigated for high-k gate insulator applications. La 2 O 3 has the largest bandgap and smallest lattice energy among the rare earth oxides, whileYb 2 O 3 has a smaller bandgap and larger lattice energy compared to La 2 O 3 . La 2 O 3 showed excellent electrical properties, such as small capacitance equivalent thickness and low leakage current density with smooth film surface and interface after rapid thermal annealing (RTA) at 400-600°C. On the other hand, the surface of Yb 2 O 3 thin film was easily roughened after RTA even at 400°C, and the leakage current density was higher compared to La 2 O 3 . The difference in characteristics for the films was considered to be attributed to the difference of their properties, such as bandgap and lattice energy. La 2 O 3 was able to keep the amorphous phase at least up to 600°C RTA, and this seems promising for future high-k gate insulator applications.
