Single electron electronics: Challenge for nanofabrication
Single electron electronics: Challenge for nanofabrication
复制标题
DOI：
10.1116/1.589228
复制
发表时间：
1997-11
影响因子：
1.4
通讯作者：
H. Ahmed
中科院分区：
文献类型：
--
作者：
H. Ahmed
Single electronics has the potential to overcome the limitations of complementary metal oxide semiconductor (CMOS) technology as device dimensions shrink towards the 10 nm scale. The basis of single electronics is the Coulomb blockade of electron transport which occurs when an electron can be localized on an isolated island. Many structures have been devised to demonstrate the Coulomb blockade and single electron transistors (SETs), based on this effect have been constructed. Metallic structures can be fabricated with vertical and lateral island and tunnel barrier structures in which the Coulomb blockade has been demonstrated at temperatures up to 77 K. Semiconductor single electronics has also been demonstrated with GaAs and silicon based structures. Silicon on insulator has the attractive feature that it may be used for conventional CMOS circuits as well as single electronics in the same chip. Several applications of SETs have been demonstrated such as memories and logic circuits. Memories based on char...
